Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics Page: 1 of 7
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Time-Resolved Ion Beam Induced Charge Collection (TRIBICC) in Micr -
Electronics' Can F- C) 7 5--- C
H, Schdne2, D.S. Walsh3, F.W. Sexton3, B.L. Doyle3, J.F. Aurand3, P. E. Dodd, R. S. Flores3, N. Wing3
Air Force Research Laboratory /VSSE, 3550 Aberdeen Ave. Albuquerque, NM 87117-5776
3Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185Abstract
The entire current transient induced by single 12 MeV Carbon
ions was measured at a 5GHz analog bandwidth. A focused
ion micro-beam was used to acquire multiple single ion tran-
sients at multiple locations of a single CMOS transistor. The
current transients reveal clear and discernible contributions of
drift and diffusive charge collection. Transients measured for
drain and off-drain ion strikes compare well to 3D DAVINCI
calculations. Estimates are presented for the drift assisted fun-
neling charge collection depth.
I. INTRODUCTION
Microelectronics placed into a radiation environment
will be susceptible to performance degradation due to an ac-
cumulated total dose and to spurious malfunctions (SEU) in-
duced by single ion strikes. The mechanisms for total dose ef-
fects are well understood and documented. Similarly, exten-
sive work has been done to model and experimentally verify
the mechanisms responsible for SEU. However, discrepancies
vacuum chamber
DUI
;tiermicroscope
Digital
Data Stream .-
Figure I: Schematic of experimental setup. Beam focus ~0.5pm,
DUT: single n-channel 0.5 pm CMOS6 (SNL) FET, Bias Tee: Pico-
second Lab (BW: 44GHz), AMP#1 & AMP#2: amplifiers (BW:
400KHz-21GHz @18 and 21 dB Small Signal Gain, respectively),
Scanner: DC-to-DC HV power supplies, Deflector: 100ns 0-3KV rise
time DC-to-DC power supply.between experimental results and charge collection simula-
tionp persist. As an example, the measured total charge col-
lect d after a single ion strike of a isolated FET test structure
does not compare well for particular bias states with 3D
charge transport device simulations'.
Detailed spatially and temporally dependent charge col-
lection measurements are needed to experimentally verify
transport simulations. Efforts to measure the true shape of
charge transients3 do not reproduce model calculations. The
sampling scopes used in these experiments require 512 con-
secutive ion hits at one device position to acquire an entire
wave form. The damage induced by repeated ion strikes4 will
affect the charge collection and can not serve as a definitive
standard to which 3D model calculation should be compared
to.
We have succeeded in measuring the spatially dependent
current transient after an 12 MeV Carbon ion strike on a sin-
gle 0.5 m n-channel CMOS6 transistor manufactured at San-
dia National Labs at an analog bandwidth of 5GHz. The
measured two dimensional maps of current transients (2D-
Q(t)) exhibit events with bandwidth limited 70 ps rise time
events at the center of a drain and slowly rising signals (-0.75
ns) at the edge of a drain. Two-dimensional scans resulted in
up to 1024 spatial charge distribution maps 2D-Q(t), each rep-
resenting a time slice as short as 5 ps of the charge collected.
This single-ion transient measurement as well as the spatial
mapping of fast transients have never before been achieved.
Charge collection depth, a key factor in estimating error
rates, can also be determined from the combination of critical
charge and upset threshold. Based on the spatial information
obtained with these techniques, the ability to predict upset
cross sections directly from simulations will be developed.
This will enable the development of SEU-hardened circuits
through predictive simulations. This contrasts with the current
practice of expensive and time-consuming design and fabrica-
tion variations followed by empirical tests to characterize the
performance-hardness trade space.
II. EXPERIMENTAL SETUP
Great care was taken to capture the charge transient for
each ion strike and to ensure a maximum analog bandwidth of
at least 20 GHz for the entire signal path up to the signal digi-SPart of this work is funded by Sandia National Laboratory. Sandia is a multiprogram laboratory operated by Sandia Corpora-
tion, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000.
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Schoene, H.; Walsh, D. S.; Sexton, F. W.; Doyle, B. L.; Aurand, J. F.; Dodd, P. E. et al. Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics, report, August 1, 1998; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc704003/m1/1/: accessed April 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.