Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control

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Description

In-situ optical diagnostics and ion beam diagnostics for plasma-etch and reactive-ion-beam etch (RIBE) tools have been developed and implemented on etch tools in the Compound Semiconductor Research Laboratory (CSRL). The optical diagnostics provide real-time end-point detection during plasma etching of complex thin-film layered structures that require precision etching to stop on a particular layer in the structure. The Monoetch real-time display and analysis program developed with this LDRD displays raw and filtered reflectance signals that enable an etch system operator to stop an etch at the desired depth within the desired layer. The ion beam diagnostics developed with this LDRD ... continued below

Physical Description

Medium: P; Size: 65 pages

Creation Information

ASHBY,CAROL I.; VAWTER,GREGORY A.; BREILAND,WILLIAM G.; BRUSKAS,LARRY A.; WOODWORTH,JOSEPH R. & HEBNER,GREGORY A. February 1, 2000.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 32 times . More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In-situ optical diagnostics and ion beam diagnostics for plasma-etch and reactive-ion-beam etch (RIBE) tools have been developed and implemented on etch tools in the Compound Semiconductor Research Laboratory (CSRL). The optical diagnostics provide real-time end-point detection during plasma etching of complex thin-film layered structures that require precision etching to stop on a particular layer in the structure. The Monoetch real-time display and analysis program developed with this LDRD displays raw and filtered reflectance signals that enable an etch system operator to stop an etch at the desired depth within the desired layer. The ion beam diagnostics developed with this LDRD will permit routine analysis of critical ion-beam profile characteristics that determine etch uniformity and reproducibility on the RIBE tool.

Physical Description

Medium: P; Size: 65 pages

Notes

OSTI as DE00751581

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  • Other Information: PBD: 1 Feb 2000

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  • Report No.: SAND2000-0152
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/751581 | External Link
  • Office of Scientific & Technical Information Report Number: 751581
  • Archival Resource Key: ark:/67531/metadc703755

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • February 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 12, 2016, 3:15 p.m.

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ASHBY,CAROL I.; VAWTER,GREGORY A.; BREILAND,WILLIAM G.; BRUSKAS,LARRY A.; WOODWORTH,JOSEPH R. & HEBNER,GREGORY A. Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control, report, February 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc703755/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.