Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages

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Description

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.

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14 p.

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QIN,X.R.; SWARTZENTRUBER,BRIAN S. & LAGALLY,M.G. February 8, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.

Physical Description

14 p.

Notes

OSTI as DE00751231

Medium: P; Size: 14 pages

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  • Journal Name: Physical Review Letters; Other Information: Submitted to Physical Review Letters

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  • Report No.: SAND2000-0373J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1103/PhysRevLett.84.4645 | External Link
  • Office of Scientific & Technical Information Report Number: 751231
  • Archival Resource Key: ark:/67531/metadc703697

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • February 8, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • April 7, 2017, 2:05 p.m.

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QIN,X.R.; SWARTZENTRUBER,BRIAN S. & LAGALLY,M.G. Atomic-scale identification of Ge/Si intermixing on Si(100) at submonolayer Ge coverages, article, February 8, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc703697/: accessed April 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.