A Silicon Ingot Lifetime Tester for Industrial Use

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Description

A specially designed lifetime measurement instrument has been developed to characterize silicon ingots before they are subjected to expensive slicing and solar-cell processing, thereby saving needless processing costs of inferior materials in a solar-cell production line. The instrument uses the direct-current photoconductance decay (DC-PCD) method for linear detection of the transient photoconductance signal and localized probing / illumination for necessary sensitivity on low resistivity and large samples. The instrument also has a compact and high-power laser diode as the light source, data averaging capability, a pneumatic ingot transport and probe positioning mechanism, and a user-friendly graphical interface for data acquisition ... continued below

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Creation Information

Wang, T. H.; Ciszek, T. F.; Landry, M. (National Renewable Energy Laboratory); Matthaus, A. (Siemens Solar Industries, Camarillo, California) & Mihalik, G. (Siemens Solar Industries, Vancouver, Washington) October 22, 1998.

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Description

A specially designed lifetime measurement instrument has been developed to characterize silicon ingots before they are subjected to expensive slicing and solar-cell processing, thereby saving needless processing costs of inferior materials in a solar-cell production line. The instrument uses the direct-current photoconductance decay (DC-PCD) method for linear detection of the transient photoconductance signal and localized probing / illumination for necessary sensitivity on low resistivity and large samples. The instrument also has a compact and high-power laser diode as the light source, data averaging capability, a pneumatic ingot transport and probe positioning mechanism, and a user-friendly graphical interface for data acquisition / lifetime calculation / data storage / hardcopy for factory-floor use with quick turnaround. A 3-dimensional finite-element analysis indicates that the as-cut surface finish is adequate for measuring the bulk lifetime on the order of 50 ms or less. Measurement repeatability and clear distinction among different grades of feedstock materials have been demonstrated.

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OSTI as DE00007130

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  • Presented at the National Center for Photovoltaics Program Review Meeting, Denver, CO (US), 09/08/1998--09/11/1998

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  • Other: DE00007130
  • Report No.: NREL/CP-590-25681
  • Grant Number: AC36-83CH10093
  • Office of Scientific & Technical Information Report Number: 7130
  • Archival Resource Key: ark:/67531/metadc703676

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  • October 22, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 7:12 p.m.

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Wang, T. H.; Ciszek, T. F.; Landry, M. (National Renewable Energy Laboratory); Matthaus, A. (Siemens Solar Industries, Camarillo, California) & Mihalik, G. (Siemens Solar Industries, Vancouver, Washington). A Silicon Ingot Lifetime Tester for Industrial Use, article, October 22, 1998; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc703676/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.