KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor

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Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.

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Muntele, C.I.; Ila, D.; Williams, E.K.; Poker, D.B. & Hensley, D.K. November 29, 1999.

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Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.

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OSTI as DE00751521

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  • Materials Research Society, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: ORNL/CP-105629
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 751521
  • Archival Resource Key: ark:/67531/metadc703505

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  • November 29, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • Jan. 19, 2016, 7:27 p.m.

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Muntele, C.I.; Ila, D.; Williams, E.K.; Poker, D.B. & Hensley, D.K. KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor, article, November 29, 1999; Tennessee. (digital.library.unt.edu/ark:/67531/metadc703505/: accessed April 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.