Influence of Rapid Thermal Ramp Rate on Phase Transformation of Titanium Silicides

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Description

ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium disilicide (TiSiz), which is the most widely used silicide for ULSI applications, exists in two crystallographic phases: the high resistance, metastable C49 phase and the low resistance, stable C54 phase. The major issue with TiSiz is the increasing thermal budget required to transform the C49 phase into the low resistance C54 phase as linewiths decrease below 0.25 pm. Annealing above 900"C to obtain this transformation often results in thermal degradation, so it is desirable to reduce the transformation temperature. The transformation temperature has been shown to be ... continued below

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9 Pages

Creation Information

Bailey, Glenn; Hu, Yao, Zhi; Smith, Paul Martin; Tay, Sing Pin; Thakur, Randhir & Yang, Jiting May 3, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

ULSI technology requires low resistance, stable silicides formed on small geometry lines. Titanium disilicide (TiSiz), which is the most widely used silicide for ULSI applications, exists in two crystallographic phases: the high resistance, metastable C49 phase and the low resistance, stable C54 phase. The major issue with TiSiz is the increasing thermal budget required to transform the C49 phase into the low resistance C54 phase as linewiths decrease below 0.25 pm. Annealing above 900"C to obtain this transformation often results in thermal degradation, so it is desirable to reduce the transformation temperature. The transformation temperature has been shown to be a fi.mction of many factors including microstructure, grain size, and impurities. In this paper we report an investig+ion of rapid thermal silicidation of titanium films (250, 400, and 600 A) on single crystalline silicon at temperatures from 300 to 1000"C. The ramp rates for these experiments are 5, 30, 70, and 200oC/s. The transformation temperature decreases as the ramp rate increases and as the initial film thickness increases. Scanning electron microscopy (SEM) is used to analyze the resultant film microstructure. The ramp rate influence on Ti silicidation is also investigated on polycrystalline Si lines with widths ranging from 0.27 to 3.0 pm.

Physical Description

9 Pages

Source

  • 195th Meeting of the Electrochemical Society; Seattle, WA; 05/02-06/1999

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  • Other: DE00007149
  • Report No.: SAND99-1007C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7149
  • Archival Resource Key: ark:/67531/metadc703202

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  • May 3, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 5, 2016, 8:52 p.m.

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Bailey, Glenn; Hu, Yao, Zhi; Smith, Paul Martin; Tay, Sing Pin; Thakur, Randhir & Yang, Jiting. Influence of Rapid Thermal Ramp Rate on Phase Transformation of Titanium Silicides, article, May 3, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc703202/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.