Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} thin films synthesized by metalorganic chemical vapor deposition

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Metalorganic chemical vapor deposition was used to synthesize epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}{minus}PbTiO{sub 3} films on SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates, using solid Mg(DPM){sub 2} as the Mg precursor. Depositing conditions have been identified under which phase-pure perovskite PMN-PT may be grown. In contrast, in lead-poor environments, an additional second phases of a disordered magnesium-niobium oxide has tentatively been identified. X-ray diffraction and selected area electron diffraction indicate a cube-on-cube orientation relationship between film and substrate, with a (001) rocking curve width of 0.1{degree}, and in-plane mosaic of 0.8{degree}. The rms surface roughness of a 200nm thick PMN ... continued below

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7 p.

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Streiffer, S. K.; Bai, G. R.; Auciello, O.; Baumann, P. K.; Ghosh, K.; Munkholm, A. et al. December 22, 1999.

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Metalorganic chemical vapor deposition was used to synthesize epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}{minus}PbTiO{sub 3} films on SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates, using solid Mg(DPM){sub 2} as the Mg precursor. Depositing conditions have been identified under which phase-pure perovskite PMN-PT may be grown. In contrast, in lead-poor environments, an additional second phases of a disordered magnesium-niobium oxide has tentatively been identified. X-ray diffraction and selected area electron diffraction indicate a cube-on-cube orientation relationship between film and substrate, with a (001) rocking curve width of 0.1{degree}, and in-plane mosaic of 0.8{degree}. The rms surface roughness of a 200nm thick PMN film on SrTiO{sub 3} was 2 to 3 nm as measured by scanned probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 350 nm thick pure PMN film on SrRuO{sub 3}/SrTiO{sub 3} were 1100 and 2%, respectively. Small-signal permittivity ranged from 900 to 1400 depending on deposition conditions and Ti content; low values for the dielectric loss between 1 and 3% were determined for all specimens. Here the authors report on growth conditions and the initial structural and dielectric characterization of these samples.

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7 p.

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OSTI as DE00751842

Medium: P; Size: 7 pages

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  • US-Japan Seminar on Dielectric and Piezoelectric Ceramics, Okinawa (JP), 11/03/1999--11/05/1999

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  • Report No.: ANL/MSD/CP-99651
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 751842
  • Archival Resource Key: ark:/67531/metadc703074

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  • December 22, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 11, 2017, 3:17 p.m.

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Streiffer, S. K.; Bai, G. R.; Auciello, O.; Baumann, P. K.; Ghosh, K.; Munkholm, A. et al. Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} thin films synthesized by metalorganic chemical vapor deposition, article, December 22, 1999; Illinois. (digital.library.unt.edu/ark:/67531/metadc703074/: accessed October 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.