Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon

PDF Version Also Available for Download.

Description

Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. The authors note that ... continued below

Physical Description

Medium: P; Size: vp.

Creation Information

Beardmore, K.M. & Gronbech-Jensen, N. May 2, 1999.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. The authors note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between the different densities of the amorphous samples. For any reasonable deformation rate, the authors observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in a denser structure relative to crystalline Si. The authors conclude that although there is substantial agreement between experimental measurements and simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally the authors show that annealing simulations of their amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in a-Si are analogous to those in c-Si.

Physical Description

Medium: P; Size: vp.

Notes

INIS; OSTI as DE00758940

Source

  • 195th Semi-Annual Meeting of the Electrochemical Society, Seattle, WA (US), 05/02/1999--05/06/1999

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LA-UR-99-1036
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 758940
  • Archival Resource Key: ark:/67531/metadc702870

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 2, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • May 6, 2016, 2:22 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Beardmore, K.M. & Gronbech-Jensen, N. Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon, article, May 2, 1999; New Mexico. (digital.library.unt.edu/ark:/67531/metadc702870/: accessed September 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.