Time-resolved photoluminescence studies of In{sub x}Ga{sub 1{minus}x}As{sub 1{minus}y}N{sub y} Metadata

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Title

  • Main Title Time-resolved photoluminescence studies of In{sub x}Ga{sub 1{minus}x}As{sub 1{minus}y}N{sub y}

Creator

  • Author: MAIR,R.A.
    Creator Type: Personal
  • Author: LIN,J.Y.
    Creator Type: Personal
  • Author: JIANG,H.X.
    Creator Type: Personal
  • Author: JONES,ERIC D.
    Creator Type: Personal
  • Author: ALLERMAN,ANDREW A.
    Creator Type: Personal
  • Author: KURTZ,STEVEN R.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: US Department of Energy (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)

Date

  • Creation: 2000-01-27

Language

  • English

Description

  • Content Description: Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a In{sub x}Ga{sub 1{minus}x}As{sub 1{minus}y}N{sub y} (x {approximately} 0.03, y {approximately} 0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07--0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, the authors observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations.
  • Physical Description: 3 p.

Subject

  • Keyword: Gallium Nitrides
  • Keyword: Indium Arsenides
  • STI Subject Categories: 36 Materials Science
  • Keyword: Excitons
  • Keyword: Temperature Dependence
  • Keyword: Charge Carriers
  • Keyword: Indium Nitrides
  • Keyword: Photoluminescence
  • Keyword: Gallium Arsenides

Source

  • Journal Name: Applied Physics Letters; Journal Volume: 76; Journal Issue: 2; Other Information: Submitted to Applied Physics Letters; Volume 76: No.2, 188-190(27 Jan 2000)

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SAND2000-0263J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1063/1.125698
  • Office of Scientific & Technical Information Report Number: 751210
  • Archival Resource Key: ark:/67531/metadc702869

Note

  • Display Note: OSTI as DE00751210
  • Display Note: Medium: P; Size: 3 pages