Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998

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AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. ... continued below

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Hall, R.B.; Ford, D.H.; Rand, J.A. & Ingram, A.E. November 11, 1999.

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AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded the following results: Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis. Different deposition techniques have been investigated, and AstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film{trademark} process. These films are from 50 to 75 {micro}m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 have been observed in these films.

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OSTI as DE00750918

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  • Other Information: Supercedes report DE00750918; PBD: 11 Nov 1999

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  • Report No.: NREL/SR--520-26122
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/750918 | External Link
  • Office of Scientific & Technical Information Report Number: 750918
  • Archival Resource Key: ark:/67531/metadc702518

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  • November 11, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 30, 2016, 1:21 p.m.

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Hall, R.B.; Ford, D.H.; Rand, J.A. & Ingram, A.E. Monolithically interconnected Silicon-Film{trademark} module technology: Annual technical report, 25 November 1997--24 November 1998, report, November 11, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc702518/: accessed June 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.