Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells

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A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO{sub 2} (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 cm/s at the 1.3 {Omega}-cm p-type (100) silicon surface. Such low S is achieved by the stack even when the RTO and SiN films individually yield considerably poorer surface passivation. Critical to achieving low S by the stack is the use of a short, moderate temperature anneal (in this study 730 C for 30 seconds) after film growth and deposition. This anneal is believed to enhance ... continued below

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5 p.

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Rohatgi, A.; Narasimha, S. & Ruby, D.S. August 1, 1998.

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  • Rohatgi, A.
  • Narasimha, S. Georgia Inst. of Tech., Atlanta, GA (United States). Univ. Center for Excellence in Photovoltaics Research and Education
  • Ruby, D.S. Sandia National Labs., Albuquerque, NM (United States)

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO{sub 2} (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 cm/s at the 1.3 {Omega}-cm p-type (100) silicon surface. Such low S is achieved by the stack even when the RTO and SiN films individually yield considerably poorer surface passivation. Critical to achieving low S by the stack is the use of a short, moderate temperature anneal (in this study 730 C for 30 seconds) after film growth and deposition. This anneal is believed to enhance the release and delivery of atomic hydrogen from the SiN film to the Si-SiO{sub 2} interface, thereby reducing the density of interface traps at the surface. Compatibility with this post-deposition anneal makes the stack passivation scheme attractive for cost-effective solar cell production since a similar anneal is required to fire screen-printed contacts. Application of the stack to passivated rear screen-printed solar cells has resulted in V{sub oc}`s of 641 mV and 633 mV on 0.65 {Omega}-cm and 1.3 {Omega}-cm FZ Si substrates, respectively. These V{sub oc} values are roughly 20 mV higher than for cells with untreated, highly recombinative back surfaces. The stack passivation has also been used to form fully screen-printed bifacial solar cells which exhibit rear-illuminated efficiency as high as 11.6% with a single layer AR coating.

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5 p.

Notes

OSTI as DE98007123

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  • 2. world conference and exhibition on photovoltaic solar energy conversion, Vienna (Austria), 6-10 Jul 1998

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  • Other: DE98007123
  • Report No.: SAND--98-1603C
  • Report No.: CONF-980735--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 656752
  • Archival Resource Key: ark:/67531/metadc702495

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • August 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 13, 2016, 1:38 p.m.

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Rohatgi, A.; Narasimha, S. & Ruby, D.S. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells, article, August 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc702495/: accessed December 14, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.