A GaAs heterojunction bipolar transistor with 106 V breakdown

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A high voltage GaAs HBT with an open-base collector breakdown voltage of 106 V and an open-emitter breakdown voltage of 134 V has been demonstrated. A high quality 9.0 {micro}m thick collector doped to 2.0{times}10{sup 15} cm{sup {minus}3} grown by MBE on a doped GaAs substrate is the key to achieving this breakdown. These results were achieved for HBTs with 4{times}40 {micro}m{sup 2} emitters. DC current gain of 38 at 6,000 A/cm{sup 2} was measured.

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10 p.

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Baca, A.G.; Klem, J.F.; Ashby, C.I. & Martin, D.C. January 11, 2000.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 42 times , with 4 in the last month . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A high voltage GaAs HBT with an open-base collector breakdown voltage of 106 V and an open-emitter breakdown voltage of 134 V has been demonstrated. A high quality 9.0 {micro}m thick collector doped to 2.0{times}10{sup 15} cm{sup {minus}3} grown by MBE on a doped GaAs substrate is the key to achieving this breakdown. These results were achieved for HBTs with 4{times}40 {micro}m{sup 2} emitters. DC current gain of 38 at 6,000 A/cm{sup 2} was measured.

Physical Description

10 p.

Notes

OSTI as DE00750198

Medium: P; Size: 10 pages

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  • Other Information: Submitted to IEEE Electron Device Letters

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  • Report No.: SAND2000-0127J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 750198
  • Archival Resource Key: ark:/67531/metadc702174

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  • January 11, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 6:55 p.m.

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Baca, A.G.; Klem, J.F.; Ashby, C.I. & Martin, D.C. A GaAs heterojunction bipolar transistor with 106 V breakdown, article, January 11, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc702174/: accessed December 13, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.