Semiconductor e-h plasma lasers

PDF Version Also Available for Download.

Description

A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limited in size by p-n junctions. High energy, electrically controlled, compact, short-pulse lasers are useful for: active optical sensors (LADAR, range imaging, imaging through clouds, dust, smoke, or turbid water), direct optical ignition of fuels and explosives, optical recording, and micro-machining. The authors present a new class of semiconductor laser that can potentially produce much more short pulse energy than conventional (injection-pumped) semiconductor lasers (CSL) because this new laser is not limited in volume or aspect ratio by the depth of ... continued below

Physical Description

3 p.

Creation Information

ZUTAVERN,FRED J.; BACA,ALBERT G.; CHOW,WENG W.; HAFICH,MICHAEL J.; HJALMARSON,HAROLD P.; LOUBRIEL,GUILLERMO M. et al. June 6, 2000.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limited in size by p-n junctions. High energy, electrically controlled, compact, short-pulse lasers are useful for: active optical sensors (LADAR, range imaging, imaging through clouds, dust, smoke, or turbid water), direct optical ignition of fuels and explosives, optical recording, and micro-machining. The authors present a new class of semiconductor laser that can potentially produce much more short pulse energy than conventional (injection-pumped) semiconductor lasers (CSL) because this new laser is not limited in volume or aspect ratio by the depth of a p-n junction. They have tested current filament semiconductor lasers (CFSL) that have produced 75nJ of 890nm radiation in 1.5ns (50W peak), approximately ten times more energy than ISL. These lasers are created from current filaments in semi-insulating GaAs and, in contrast to CSL, are not based on current injection. Instead, low-field avalanche carrier generation produces a high-density, charge-neutral plasma channel with the required carrier density distribution for lasing. They have observed filaments as long as 3.4cm and several hundred microns in diameter in the high gain GaAs photoconductive switches. Their smallest dimension can be more than 100 times the carrier diffusion length in GaAs. This paper will report spectral narrowing, lasing thresholds, beam divergence, temporal narrowing, and energies which imply lasing for several configurations of CFSL. It will also discuss active volume scaling based on recent high current tests.

Physical Description

3 p.

Notes

OSTI as DE00756423

Medium: P; Size: 3 pages

Source

  • IEEE International Semiconductor Laser Conference, Monterey, CA (US), 09/25/2000--09/29/2000

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: SAND2000-1432C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 756423
  • Archival Resource Key: ark:/67531/metadc702152

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • June 6, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • April 10, 2017, 7:36 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 4

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

ZUTAVERN,FRED J.; BACA,ALBERT G.; CHOW,WENG W.; HAFICH,MICHAEL J.; HJALMARSON,HAROLD P.; LOUBRIEL,GUILLERMO M. et al. Semiconductor e-h plasma lasers, article, June 6, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc702152/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.