Ultrafast Scanning Tunneling Microscopy Using a Photoexcited Low-Temperature-Grown GaAs Tip

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Description

The authors report ultrafast scanning tunneling microscopy using a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. They use this tip to detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution of 1.7 ps. A dependence of the transient signal upon spatial position of the tip is revealed, indicating that the signal arises from areas on the sample smaller than {approximately}20nm.

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Donati, G.P.; Rodriguez, G. & Taylor, A.J. May 21, 1999.

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The authors report ultrafast scanning tunneling microscopy using a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. They use this tip to detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution of 1.7 ps. A dependence of the transient signal upon spatial position of the tip is revealed, indicating that the signal arises from areas on the sample smaller than {approximately}20nm.

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Medium: P; Size: vp.

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OSTI as DE00759259

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  • Ultrafast Phenomena XI, Garmisch-Partenkirchen (DE), 07/12/1998--07/17/1998

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  • Report No.: LA-UR-98-4473
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 759259
  • Archival Resource Key: ark:/67531/metadc702063

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  • May 21, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 28, 2016, 11:28 p.m.

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Donati, G.P.; Rodriguez, G. & Taylor, A.J. Ultrafast Scanning Tunneling Microscopy Using a Photoexcited Low-Temperature-Grown GaAs Tip, article, May 21, 1999; New Mexico. (digital.library.unt.edu/ark:/67531/metadc702063/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.