Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

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This research has shown that epilayers with residual impurity concentrations of 5 x 10{sup 13} cm{sup {minus}3} can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long ... continued below

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124 p.

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Olsen, C.S. May 1, 1998.

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This thesis or dissertation is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 91 times , with 4 in the last month . More information about this document can be viewed below.

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  • Olsen, C.S. Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering Dept.

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This research has shown that epilayers with residual impurity concentrations of 5 x 10{sup 13} cm{sup {minus}3} can be grown by producing the purest Pb available in the world. These epilayers have extremely low minority acceptor concentrations, which is ideal for fabrication of IR absorbing layers. The Pb LPE growth of Ge also has the advantageous property of gettering Cu from the epilayer and the substrate. Epilayers have been grown with intentional Sb doping for IR absorption on lightly doped substrates. This research has proven that properly working Ge BIB detectors can be fabricated from the liquid phase as long as pure enough solvents are available. The detectors have responded at proper wavelengths when reversed biased even though the response did not quite reach minimum wavenumbers. Optimization of the Sb doping concentration should further decrease the photoionization energy of these detectors. Ge BIB detectors have been fabricated that respond to 60 cm{sup {minus}1} with low responsivity. Through reduction of the minority residual impurities, detector performance has reached responsivities of 1 A/W. These detectors have exhibited quantum efficiency and NEP values that rival conventional photoconductors and are expected to provide a much more sensitive tool for new scientific discoveries in a number of fields, including solid state studies, astronomy, and cosmology.

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124 p.

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OSTI as DE98056111

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  • Other Information: DN: Thesis submitted to the Univ. of California, Berkeley, CA (US); TH: Thesis (Ph.D.)

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  • Other: DE98056111
  • Report No.: LBNL--41810
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 674712
  • Archival Resource Key: ark:/67531/metadc702048

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • Aug. 8, 2016, 8:32 p.m.

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Olsen, C.S. Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy, thesis or dissertation, May 1, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc702048/: accessed November 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.