Backside localization of open and shorted IC interconnections

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Description

A new failure analysis technique has been developed for backside and frontside localization of open and shorted interconnections on ICs. This scanning optical microscopy technique takes advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The method utilizes the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detects shorts. The interaction physics describing the signal generation process and several ... continued below

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8 p.

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Cole, E.I. Jr.; Tangyunyong, P. & Barton, D.L. July 1, 1998.

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Description

A new failure analysis technique has been developed for backside and frontside localization of open and shorted interconnections on ICs. This scanning optical microscopy technique takes advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The method utilizes the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detects shorts. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed.

Physical Description

8 p.

Notes

OSTI as DE98003971

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  • 1998 Institute of Electrical and Electronics Engineers (IEEE) international reliability physics symposium, Reno, NV (United States), 30 Mar - 2 Apr 1998

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  • Other: DE98003971
  • Report No.: SAND--98-1652C
  • Report No.: CONF-980320--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 629451
  • Archival Resource Key: ark:/67531/metadc699328

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • July 1, 1998

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 7:57 p.m.

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Cole, E.I. Jr.; Tangyunyong, P. & Barton, D.L. Backside localization of open and shorted IC interconnections, article, July 1, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc699328/: accessed October 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.