Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices

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Description

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. ... continued below

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25 p.

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Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J. et al. April 1, 1999.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 24 times , with 5 in the last month . More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. In addition, we performed a number of experiments to determine how various materials processing steps affect both the optical and electrical properties of GaN-based materials. These studies include photoluminescence studies of GaN epilayers after post-growth rapid thermal annealing, ion implantation to produce n- and p-type material and electrical and optical studies of plasma-etched structures.

Physical Description

25 p.

Notes

OSTI as DE00005901

Medium: P; Size: 25 pages

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  • Other Information: PBD: 1 Apr 1999

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  • Report No.: SAND99-0817
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/5901 | External Link
  • Office of Scientific & Technical Information Report Number: 5901
  • Archival Resource Key: ark:/67531/metadc699032

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • April 1, 1999

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 10, 2017, 6:23 p.m.

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Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J. et al. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices, report, April 1, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc699032/: accessed April 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.