Development of N-layer materials for SNS junction and SQUID applications

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Materials characteristics including water reactivity, oxygen loss, electromigration of oxide ions, and interfacial reactivity problems have plagued attempts to produce reliable and reproducible cuprate SNS superconductor junctions. In an effort to solve some of these formidable problems, new N-layer compounds from the family of R{sub 1{minus}x}Ca{sub x}Ba{sub 2{minus}y}La{sub y}Cu{sub 3{minus}z}M{sub z}O{sub 7{minus}{delta}} (R = Y, Gd and Pr; M = Co, Ni and Zn; 0 < x < 0.4; 0 < y < 0.4; 0 < z < 0.4) have been developed using a crystal engineering approach. The lattice structure of the new N-layer compounds displays a high compatibility with ... continued below

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5 p.

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Zhou, J. P.; McDevitt, J. T. & Jia, Q. September 1, 1997.

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  • Zhou, J. P.
  • McDevitt, J. T. Univ. of Texas, Austin, TX (United States). Dept. of Chemistry and Biochemistry
  • Jia, Q. Los Alamos National Lab., NM (United States). Superconductivity Technology Center

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Description

Materials characteristics including water reactivity, oxygen loss, electromigration of oxide ions, and interfacial reactivity problems have plagued attempts to produce reliable and reproducible cuprate SNS superconductor junctions. In an effort to solve some of these formidable problems, new N-layer compounds from the family of R{sub 1{minus}x}Ca{sub x}Ba{sub 2{minus}y}La{sub y}Cu{sub 3{minus}z}M{sub z}O{sub 7{minus}{delta}} (R = Y, Gd and Pr; M = Co, Ni and Zn; 0 < x < 0.4; 0 < y < 0.4; 0 < z < 0.4) have been developed using a crystal engineering approach. The lattice structure of the new N-layer compounds displays a high compatibility with the parent YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} phase and the modified materials exhibit enhanced durability properties. The compounds have been utilized to make both SNS junctions and SQUID devices.

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5 p.

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INIS; OSTI as DE97008967

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  • 3. joint ISTEC-MRS international workshop on superconductivity, Big Island, HI (United States), 15-18 Jun 1997

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  • Other: DE97008967
  • Report No.: LA-UR--97-1683
  • Report No.: CONF-9706119--
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 537373
  • Archival Resource Key: ark:/67531/metadc698803

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Office of Scientific & Technical Information Technical Reports

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  • September 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 23, 2016, 2:09 p.m.

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Zhou, J. P.; McDevitt, J. T. & Jia, Q. Development of N-layer materials for SNS junction and SQUID applications, article, September 1, 1997; New Mexico. (digital.library.unt.edu/ark:/67531/metadc698803/: accessed December 15, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.