The effect of gettering on areal inhomogeneities in large-area multicrystalline-silicon solar cells

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Multicrystalline-silicon (mc-Si) materials and cells feature large areal variations in material and junction quality. The regions with poor device quality have been predicted to have more recombination current at forward bias than a simple area-weighted average due to the parallel interconnection of the good and bad regions by the front junction. The authors have examined the effect of gettering on areal inhomogeneities in large-area mc-Si cells. Cells with large areal inhomogeneities were found to have increased non-ideal recombination current, which is in line with theoretical predictions. Phosphorus-diffusion and aluminum-alloy gettering of mc-Si was found to reduce the areal inhomogeneities and ... continued below

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5 p.

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Gee, J.M. & Sopori, B.L. October 1, 1997.

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  • Gee, J.M. Sandia National Labs., Albuquerque, NM (United States)
  • Sopori, B.L. National Renewable Energy Lab., Golden, CO (United States)

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Multicrystalline-silicon (mc-Si) materials and cells feature large areal variations in material and junction quality. The regions with poor device quality have been predicted to have more recombination current at forward bias than a simple area-weighted average due to the parallel interconnection of the good and bad regions by the front junction. The authors have examined the effect of gettering on areal inhomogeneities in large-area mc-Si cells. Cells with large areal inhomogeneities were found to have increased non-ideal recombination current, which is in line with theoretical predictions. Phosphorus-diffusion and aluminum-alloy gettering of mc-Si was found to reduce the areal inhomogeneities and improve large-area mc-Si device performance.

Physical Description

5 p.

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OSTI as DE98000183

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  • 7. workshop on the role of impurities and defects in silicon device processing, Vail, CO (United States), 11-13 Aug 1997

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  • Other: DE98000183
  • Report No.: SAND--97-2124C
  • Report No.: CONF-970875--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 541844
  • Archival Resource Key: ark:/67531/metadc698429

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  • October 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • March 31, 2016, 9:08 p.m.

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Gee, J.M. & Sopori, B.L. The effect of gettering on areal inhomogeneities in large-area multicrystalline-silicon solar cells, article, October 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc698429/: accessed August 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.