A new method for making shallow p-type junctions

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In this paper the authors present a new method for making shallow p-type junctions in silicon by molecular ion implantation. Unlike current molecular ion implantation methods which use boron and fluorine molecules, this new method uses an element which is completely miscible in silicon. Note that fluorine is an element that saturates at a very low concentration in silicon. The compounds used in this new method are boron silicides and boron germanium molecules. These compounds have several distinct advantages including the facts that the co-element silicon (or germanium) has a very high saturation value in the silicon matrix, the co-element ... continued below

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4 p.

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Ling, P.; Strathman, M.D.; Ling, C.H.; Doyle, B.; Walsh, D.; Larson, L. et al. August 1, 1998.

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In this paper the authors present a new method for making shallow p-type junctions in silicon by molecular ion implantation. Unlike current molecular ion implantation methods which use boron and fluorine molecules, this new method uses an element which is completely miscible in silicon. Note that fluorine is an element that saturates at a very low concentration in silicon. The compounds used in this new method are boron silicides and boron germanium molecules. These compounds have several distinct advantages including the facts that the co-element silicon (or germanium) has a very high saturation value in the silicon matrix, the co-element is massive and therefore creates more damage during implantation, and the co-element has a larger projected range than the boron. Note that the Rp for fluorine is shallower than that of Boron for a BF{sub 2} implant. Recent experiments indicate that BSi ion beams can be generated in a sputter ion source with efficiencies of 0.5% with respect to the generated Si beam. A plan to develop a new ion source that is compatible with current ion implantation systems is presented.

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4 p.

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OSTI as DE98007250

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  • 12. international conference on ion implantation technology, Kyoto (Japan), 22-28 Jun 1998

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  • Other: DE98007250
  • Report No.: SAND--98-1781C
  • Report No.: CONF-980679--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 639759
  • Archival Resource Key: ark:/67531/metadc698360

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  • August 1, 1998

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  • Aug. 14, 2015, 8:43 a.m.

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  • Dec. 3, 2015, 4:18 p.m.

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Ling, P.; Strathman, M.D.; Ling, C.H.; Doyle, B.; Walsh, D.; Larson, L. et al. A new method for making shallow p-type junctions, article, August 1, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc698360/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.