Metallization technology for tenth-micron range integrated circuits

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Description

A critical step in the fabrication of integrated circuits is the deposition of metal layers which interconnect the various circuit elements that have been formed in earlier process steps. In particular, columns of copper several times higher than the characteristic dimension of the circuit elements was needed. Features with a diameter of a few tenths of a micron and a height of about one micron need to be filled at rates in the half to one micron per minute range. With the successful development of a copper deposition technology meeting these requirements, integrated circuits with simpler designs and higher performance ... continued below

Physical Description

6 p.

Creation Information

Berry, L.A. & Harper, M.E. November 27, 1996.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Oak Ridge Y-12 Plant
    Publisher Info: Oak Ridge Y-12 Plant, TN (United States)
    Place of Publication: Tennessee

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Description

A critical step in the fabrication of integrated circuits is the deposition of metal layers which interconnect the various circuit elements that have been formed in earlier process steps. In particular, columns of copper several times higher than the characteristic dimension of the circuit elements was needed. Features with a diameter of a few tenths of a micron and a height of about one micron need to be filled at rates in the half to one micron per minute range. With the successful development of a copper deposition technology meeting these requirements, integrated circuits with simpler designs and higher performance could be economically manufactured. Several technologies for depositing copper were under development. No single approach had an optimum combination of performance (feature characteristics), cost (deposition rates), and manufacturability (integration with other processes and tool reliability). Chemical vapor deposition, plating, sputtering and ionized-physical vapor deposition (I-PVD) were all candidate technologies. Within this project, the focus was on I-PVD.

Physical Description

6 p.

Notes

OSTI as DE98004782

Source

  • Other Information: PBD: 27 Nov 1996

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Identifier

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  • Other: DE98004782
  • Report No.: Y/AMT--411
  • Grant Number: AC05-84OR21400
  • DOI: 10.2172/594425 | External Link
  • Office of Scientific & Technical Information Report Number: 594425
  • Archival Resource Key: ark:/67531/metadc698284

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Office of Scientific & Technical Information Technical Reports

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Creation Date

  • November 27, 1996

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 8, 2016, 5:50 p.m.

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Berry, L.A. & Harper, M.E. Metallization technology for tenth-micron range integrated circuits, report, November 27, 1996; Tennessee. (digital.library.unt.edu/ark:/67531/metadc698284/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.