Selective Etching of Wide Bandgap Nitrides

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HIGH-DENSITY PLASMA ETCHING HAS BEEN AN EFFECTIVE PATTERNING TECHNIQUE FOR THE GROUP-III NITRIDES DUE TO ION FLUXES WHICH ARE 2 TO 4 ORDERS OF MAGNITUDE HIGHER THAN MORE CONVENTIONAL REACTIVE ION ETCH (RIE) SYSTEMS. GAN ETCH RATES EXCEEDING 0.68 MICROMETER/MIN HAVE BEEN REPORTED IN C12/H2/AR INDUCTIVELY COUPLED PLASMAS (ICP) AT -280 V DC-BIAS. UNDER THESE CONDITIONS, THE ETCH MECHANISM IS DOMINATED BY ION BOMBARDMENT ENERGIES WHICH CAN INDUCE DAMAGE AND MINIMIZE ETCH SELECTIVITY. HIGH SELECTIVITY ETCH PROCESSES ARE OFTEN NECESSARY FOR HETEROSTRUCTURE DEVICES WHICH ARE BECOMING MORE PROMINENT AS GROWTH TECHNIQUES IMPROVE. IN THIS STUDY, WE WILL REPORT HIGH-DENSITY ICP ... continued below

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9 p.

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Shul, R.J.; Willison, C.G.; Bridges, M.M.; Han, J.; Lee, J.W.; Pearton, S.J. et al. December 31, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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HIGH-DENSITY PLASMA ETCHING HAS BEEN AN EFFECTIVE PATTERNING TECHNIQUE FOR THE GROUP-III NITRIDES DUE TO ION FLUXES WHICH ARE 2 TO 4 ORDERS OF MAGNITUDE HIGHER THAN MORE CONVENTIONAL REACTIVE ION ETCH (RIE) SYSTEMS. GAN ETCH RATES EXCEEDING 0.68 MICROMETER/MIN HAVE BEEN REPORTED IN C12/H2/AR INDUCTIVELY COUPLED PLASMAS (ICP) AT -280 V DC-BIAS. UNDER THESE CONDITIONS, THE ETCH MECHANISM IS DOMINATED BY ION BOMBARDMENT ENERGIES WHICH CAN INDUCE DAMAGE AND MINIMIZE ETCH SELECTIVITY. HIGH SELECTIVITY ETCH PROCESSES ARE OFTEN NECESSARY FOR HETEROSTRUCTURE DEVICES WHICH ARE BECOMING MORE PROMINENT AS GROWTH TECHNIQUES IMPROVE. IN THIS STUDY, WE WILL REPORT HIGH-DENSITY ICP ETCH RATES AND SELECTIVITIES FOR GAN, ALN, AND INN AS A FUNCTION OF CATHODE POWER, ICP-SOURCE POWER, AND CHAMBER PRESSURE. GAN:ALN SELECTIVITIES {gt} 8:1 were observed in a C12/Ar plasma at 10 mTorr pressure, 500 W ICP-source power, and 130 W cathode rf-power, while the GaN:InN selectivity was optimized at approx. 6.5:1 at 5 mTorr, 500 W ICP-source power, and 130 W cathode rf-power.

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9 p.

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OSTI as DE98002674

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  • 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997

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  • Other: DE98002674
  • Report No.: SAND--98-0257C
  • Report No.: CONF-971201--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 629306
  • Archival Resource Key: ark:/67531/metadc698072

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  • December 31, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 7:20 p.m.

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Shul, R.J.; Willison, C.G.; Bridges, M.M.; Han, J.; Lee, J.W.; Pearton, S.J. et al. Selective Etching of Wide Bandgap Nitrides, article, December 31, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc698072/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.