Comprehensive research on stability of amorphous silicon and alloy materials and devices. Annual report, May 31, 1995--May 30, 1996

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This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si,Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion ... continued below

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34 p.

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Dalal, V.L.; Kaushal, S. & Han, K. August 1, 1997.

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Description

This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si,Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.

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34 p.

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OSTI as DE97008782

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  • Other Information: PBD: Aug 1997

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  • Other: DE97008782
  • Report No.: NREL/SR--520-23421
  • Grant Number: AC36-83CH10093
  • DOI: 10.2172/525055 | External Link
  • Office of Scientific & Technical Information Report Number: 525055
  • Archival Resource Key: ark:/67531/metadc697996

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Office of Scientific & Technical Information Technical Reports

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  • August 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • March 31, 2016, 6:10 p.m.

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Dalal, V.L.; Kaushal, S. & Han, K. Comprehensive research on stability of amorphous silicon and alloy materials and devices. Annual report, May 31, 1995--May 30, 1996, report, August 1, 1997; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc697996/: accessed December 15, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.