Processing challenges for GaN-based photonic and electronic devices

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The wide gap materials SiC, GaN and to a lesser extent diamond are attracting great interest for high power/high temperature electronics. There are a host of device processing challenges presented by these materials because of their physical and chemical stability, including difficulty in achieving stable, low contact resistances, especially for one conductivity type, absence of convenient wet etch recipes, generally slow dry etch rates, the high temperatures needed for implant activation, control of suitable gate dielectrics and the lack of cheap, large diameter conducting and semi-insulating substrates. The relatively deep ionization levels of some of the common dopants (Mg in ... continued below

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19 p.

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Pearton, S.J.; Ren, F. & Shul, R.J. September 1, 1997.

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  • Pearton, S.J. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
  • Ren, F. Bell Labs., Murray Hill, NJ (United States)
  • Shul, R.J. Sandia National Labs., Albuquerque, NM (United States)

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The wide gap materials SiC, GaN and to a lesser extent diamond are attracting great interest for high power/high temperature electronics. There are a host of device processing challenges presented by these materials because of their physical and chemical stability, including difficulty in achieving stable, low contact resistances, especially for one conductivity type, absence of convenient wet etch recipes, generally slow dry etch rates, the high temperatures needed for implant activation, control of suitable gate dielectrics and the lack of cheap, large diameter conducting and semi-insulating substrates. The relatively deep ionization levels of some of the common dopants (Mg in GaN; B, Al in SiC; P in diamond) means that carrier densities may be low at room temperature, and thus contact resistances will be greatly improved provided the metallization is stable and reliable. Some recent work with CoSi{sub x} on SiC and W-alloys on GaN show promise for improved ohmic contacts. The issue of unintentional hydrogen passivation of dopants will also be covered - this leads to strong increases in resistivity of p-SiC and GaN, but to large decreases in resistivity of diamond. Recent work on development of wet etches has found recipes for AlN (KOH), while photochemical etching of SiC and GaN has been reported. In the latter cases p-type materials is not etched, which can be a major liability in some devices. The dry etch results obtained with various novel reactors, including ICP, ECR and LE4 will be compared - the high ion densities in the former techniques produce the highest etch rates for strongly-bonded materials, but can lead to preferential loss of N from the nitrides and therefore to a highly conducting surface. This is potentially a major problem for fabrication of dry etched, recessed gate FET structures.

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19 p.

Notes

OSTI as DE97009352

Source

  • Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997

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  • Other: DE97009352
  • Report No.: SAND--97-2236C
  • Report No.: CONF-970302--23
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 531095
  • Archival Resource Key: ark:/67531/metadc697473

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  • September 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • Aug. 23, 2016, 3:55 p.m.

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Pearton, S.J.; Ren, F. & Shul, R.J. Processing challenges for GaN-based photonic and electronic devices, article, September 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc697473/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.