Liquid phase epitaxial growth of GaAs

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Research into new semiconductor materials for measurement of electromagnetic radiation over a wide range of energies has been an active field for several decades. There is a strong desire to identify and develop new materials which can lead to improved detectors. Such devices are expected to solve problems that cannot be solved using the semiconductor materials and device structures which have been traditionally used for radiation detection. In order for a detector which is subjected to some type of irradiation to respond, the radiation must undergo an interaction with the detector. The net result of the radiation interaction in a ... continued below

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177 p.

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Wynne, D. I. October 1, 1997.

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This thesis or dissertation is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 29 times , with 7 in the last month . More information about this document can be viewed below.

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  • Wynne, D. I. Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

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Description

Research into new semiconductor materials for measurement of electromagnetic radiation over a wide range of energies has been an active field for several decades. There is a strong desire to identify and develop new materials which can lead to improved detectors. Such devices are expected to solve problems that cannot be solved using the semiconductor materials and device structures which have been traditionally used for radiation detection. In order for a detector which is subjected to some type of irradiation to respond, the radiation must undergo an interaction with the detector. The net result of the radiation interaction in a broad category of detectors is the generation of mobile electric charge carriers (electrons and/or holes) within the detector active volume. This charge is collected at the detector contacts and it forms the basic electrical signal. Typically, the collection of the charge is accomplished through the imposition of an electric field within the detector which causes the positive and/or negative charges created by the radiation to flow in opposite directions to the contacts. For the material to serve as a good radiation detector, a large fraction (preferably 100%) of all carriers created by the interacting incident radiation must be collected. Charge trapping by deep level impurities and structural defects can seriously degrade detector performance. The focus of this thesis is on far infrared and X-ray detection. In X-ray detector applications of p-I-n diodes, the object is to measure accurately the energy distribution of the incident radiation quanta. One important property of such detectors is their ability to measure the energy of individual incident photons with high energy resolution.

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177 p.

Notes

OSTI as DE98051537

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  • Other Information: TH: Thesis (Ph.D.)

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  • Other: DE98051537
  • Report No.: LBNL--40929
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 572653
  • Archival Resource Key: ark:/67531/metadc697144

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • Aug. 8, 2016, 8:49 p.m.

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Wynne, D. I. Liquid phase epitaxial growth of GaAs, thesis or dissertation, October 1, 1997; California. (digital.library.unt.edu/ark:/67531/metadc697144/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.