In-situ optical photoreflectance during MOCVD

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This report summarizes the development of in situ optical photoreflectance as a tool for measuring impurity concentrations in compound semiconductors. The authors have successfully explored the use of photoreflectance as an in situ tool for measuring n-type doping levels in metal-organic chemical vapor deposition (MOCVD) grown GaAs materials. The technique measures phase and frequency shifts in Franz-Keldysh oscillations measured on uniformly doped thin films. Doping concentrations from 5 {times} 10{sup 16} to 1 {times} 10{sup 18} can be measured at temperatures below 130 C. A method has been developed to include photoreflectance as the last step in the pre-growth in ... continued below

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9 p.

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Breiland, W.G.; Hammons, B.E.; Hou, H.Q. & Mei, X.B. January 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This report summarizes the development of in situ optical photoreflectance as a tool for measuring impurity concentrations in compound semiconductors. The authors have successfully explored the use of photoreflectance as an in situ tool for measuring n-type doping levels in metal-organic chemical vapor deposition (MOCVD) grown GaAs materials. The technique measures phase and frequency shifts in Franz-Keldysh oscillations measured on uniformly doped thin films. Doping concentrations from 5 {times} 10{sup 16} to 1 {times} 10{sup 18} can be measured at temperatures below 130 C. A method has been developed to include photoreflectance as the last step in the pre-growth in situ calibration procedure for MOCVD thin film structures. This combined capability now enables one to rapidly and accurately determine growth rates, chemical composition, and doping levels necessary to generate a recipe to fabricate complex optoelectronic compound semiconductor devices.

Physical Description

9 p.

Notes

OSTI as DE98002600

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  • Other Information: PBD: Jan 1998

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  • Other: DE98002600
  • Report No.: SAND--97-3077
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/564267 | External Link
  • Office of Scientific & Technical Information Report Number: 564267
  • Archival Resource Key: ark:/67531/metadc696546

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • January 1, 1998

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 4:08 p.m.

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Breiland, W.G.; Hammons, B.E.; Hou, H.Q. & Mei, X.B. In-situ optical photoreflectance during MOCVD, report, January 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc696546/: accessed November 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.