Recent progress on the self-aligned, selective-emitter silicon solar cell

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We developed a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial, screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. We succeeded in finding a set of parameters which resulted in good emitter uniformity and improved cell performance. We used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed, multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. Our initial results found a ... continued below

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5 p.

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Ruby, D.S.; Yang, P. & Roy, M. October 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We developed a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial, screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. We succeeded in finding a set of parameters which resulted in good emitter uniformity and improved cell performance. We used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed, multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. Our initial results found a statistically significant improvement of half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with a 3-step PECVD-nitride surface passivation and hydrogenation treatment. 12 refs., 4 figs., 3 tabs.

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5 p.

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OSTI as DE98000398

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  • 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997

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  • Other: DE98000398
  • Report No.: SAND--97-2462C
  • Report No.: CONF-970953--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 538050
  • Archival Resource Key: ark:/67531/metadc696243

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • October 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 8:35 p.m.

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Ruby, D.S.; Yang, P. & Roy, M. Recent progress on the self-aligned, selective-emitter silicon solar cell, article, October 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc696243/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.