Recent progress on the self-aligned, selective-emitter silicon solar cell

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We developed a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial, screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. We succeeded in finding a set of parameters which resulted in good emitter uniformity and improved cell performance. We used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed, multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. Our initial results found a ... continued below

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5 p.

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Ruby, D.S.; Yang, P. & Roy, M. October 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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We developed a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial, screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. We succeeded in finding a set of parameters which resulted in good emitter uniformity and improved cell performance. We used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed, multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. Our initial results found a statistically significant improvement of half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with a 3-step PECVD-nitride surface passivation and hydrogenation treatment. 12 refs., 4 figs., 3 tabs.

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5 p.

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OSTI as DE98000398

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  • 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997

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  • Other: DE98000398
  • Report No.: SAND--97-2462C
  • Report No.: CONF-970953--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 538050
  • Archival Resource Key: ark:/67531/metadc696243

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  • October 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 8:35 p.m.

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Ruby, D.S.; Yang, P. & Roy, M. Recent progress on the self-aligned, selective-emitter silicon solar cell, article, October 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc696243/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.