Vacancy supersaturations produced by high-energy ion implantation

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Description

A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range ({1/2}R{sub p}) of MeV implants. The vacancy clustered region produced by a 2 MeV Si{sup +} implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of ... continued below

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14 p.

Creation Information

Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.; Haynes, T.E.; Agarwal, A. et al. January 1, 1998.

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Description

A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range ({1/2}R{sub p}) of MeV implants. The vacancy clustered region produced by a 2 MeV Si{sup +} implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions.

Physical Description

14 p.

Notes

INIS; OSTI as DE98004112

Source

  • 8. international symposium on silicon materials science and technology, San Diego, CA (United States), 3-8 May 1998

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  • Other: DE98004112
  • Report No.: ORNL/CP--96088
  • Report No.: CONF-980528--
  • Grant Number: AC05-96OR22464
  • DOI: 10.2172/645530 | External Link
  • Office of Scientific & Technical Information Report Number: 645530
  • Archival Resource Key: ark:/67531/metadc696133

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Creation Date

  • January 1, 1998

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  • Aug. 14, 2015, 8:43 a.m.

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  • Jan. 21, 2016, 1:44 p.m.

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Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.; Haynes, T.E.; Agarwal, A. et al. Vacancy supersaturations produced by high-energy ion implantation, report, January 1, 1998; Tennessee. (digital.library.unt.edu/ark:/67531/metadc696133/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.