Release of impurities from structural defects in polycrystalline silicon solar cells

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Description

It is critical to understand the behavior of metallic impurities in polycrystalline silicon used for solar cells. These impurities significantly increase the minority carrier recombination rate and, in turn, degrade cell performance. Impurity gettering is a commonly used method to remove these impurities from the material, however, past work has suggested that impurity release from structural defects drastically limits the gettering process. Presently, there is only a limited understanding of impurity release from structural defects. In this work, a correlation between structural defects and the location of metal impurities in as-grown material is established and the release of nickel and ... continued below

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9 p.

Creation Information

McHugo, S.A. & Imaizumi, M. April 1, 1997.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • McHugo, S.A. Lawrence Berkeley National Lab., CA (United States). Advanced Light Source
  • Imaizumi, M. Toyota Technological Inst., Nagoya (Japan)

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Description

It is critical to understand the behavior of metallic impurities in polycrystalline silicon used for solar cells. These impurities significantly increase the minority carrier recombination rate and, in turn, degrade cell performance. Impurity gettering is a commonly used method to remove these impurities from the material, however, past work has suggested that impurity release from structural defects drastically limits the gettering process. Presently, there is only a limited understanding of impurity release from structural defects. In this work, a correlation between structural defects and the location of metal impurities in as-grown material is established and the release of nickel and copper from structural defects in polycrystalline silicon was studied in as-grown material and after sequential thermal treatments which dissolve the impurities into the silicon matrix. Synchrotron-based x-ray fluorescence impurity mapping with spatial resolution of {approx} 1 {micro}m, was used to determine impurity distributions after each thermal treatment.

Physical Description

9 p.

Notes

OSTI as DE97007898

Source

  • Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997

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  • Other: DE97007898
  • Report No.: LBNL--40417
  • Report No.: LSBL--371;CONF-970302--20
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/515591 | External Link
  • Office of Scientific & Technical Information Report Number: 515591
  • Archival Resource Key: ark:/67531/metadc696114

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Creation Date

  • April 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 5, 2016, 5:53 p.m.

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McHugo, S.A. & Imaizumi, M. Release of impurities from structural defects in polycrystalline silicon solar cells, report, April 1, 1997; California. (digital.library.unt.edu/ark:/67531/metadc696114/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.