Charge collection and SEU from angled ion strikes

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Description

Single event upsets (SEUs) are caused in semiconductor microcircuits when charge is deposited in a sensitive volume of the circuit by an incident energetic particle. Collection of this charge causes a loss of information stored at the struck circuit node. Sensitive regions of a microcircuit typically consist of reverse-biased junctions which efficiently collect deposited charge through the influence of drift fields. During laboratory SEU testing, angled ion strikes are often used to conveniently mimic normally incident particles of higher linear energy transfer (LET). This practice is based on ion pathlengths through a thin rectangular parallelepiped (RPP) sensitive volume. Specifically, the ... continued below

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6 p.

Creation Information

Dodd, P.E.; Shaneyfelt, M.R. & Sexton, F.W. March 1, 1997.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Single event upsets (SEUs) are caused in semiconductor microcircuits when charge is deposited in a sensitive volume of the circuit by an incident energetic particle. Collection of this charge causes a loss of information stored at the struck circuit node. Sensitive regions of a microcircuit typically consist of reverse-biased junctions which efficiently collect deposited charge through the influence of drift fields. During laboratory SEU testing, angled ion strikes are often used to conveniently mimic normally incident particles of higher linear energy transfer (LET). This practice is based on ion pathlengths through a thin rectangular parallelepiped (RPP) sensitive volume. Specifically, the authors assume that an angled strike deposits 1/cos{theta} more charge in the sensitive volume, which in turn is assumed to lead to 1/cos{theta} more charge collection at the sensitive node, and an increase in the particle`s effective LET to 1/cos{theta} higher than at normal incidence.

Physical Description

6 p.

Notes

OSTI as DE97004376

Source

  • 34. IEEE nuclear and space radiation effects conference, Snowmass, CO (United States), 21-25 Jul 1997

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  • Other: DE97004376
  • Report No.: SAND--97-0483C
  • Report No.: CONF-970711--2
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 516010
  • Archival Resource Key: ark:/67531/metadc696107

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • March 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 7:28 p.m.

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Dodd, P.E.; Shaneyfelt, M.R. & Sexton, F.W. Charge collection and SEU from angled ion strikes, article, March 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc696107/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.