Selectively oxidized vertical-cavity laser performance and technology

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Description

The authors discuss revolutionary performance advances in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), which have enabled low operating power laser diodes appropriate for aerospace applications. Incorporating buried oxide layers converted from AIGaAs layers within the laser cavity produces enhanced optical and electrical confinement enabling superior laser performance, such as high efficiency and modulation bandwidth. VCSELs also shown to be viable over varied environmental conditions such as ambient temperature and ionized radiation. The development of novel VCSEL technologies for advanced system applications is also described. Two dimensional individually addressable VCSEL arrays exhibit uniform threshold and operating characteristics. Bottom emitting 850 ... continued below

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8 p.

Creation Information

Choquette, K.D.; Hou, H.Q.; Geib, K.M. & Hammons, B.E. February 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors discuss revolutionary performance advances in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), which have enabled low operating power laser diodes appropriate for aerospace applications. Incorporating buried oxide layers converted from AIGaAs layers within the laser cavity produces enhanced optical and electrical confinement enabling superior laser performance, such as high efficiency and modulation bandwidth. VCSELs also shown to be viable over varied environmental conditions such as ambient temperature and ionized radiation. The development of novel VCSEL technologies for advanced system applications is also described. Two dimensional individually addressable VCSEL arrays exhibit uniform threshold and operating characteristics. Bottom emitting 850 nm VCSEL arrays fabricated using wafer fusion are also reported.

Physical Description

8 p.

Notes

OSTI as DE98002721

Source

  • 1998 Institute of Electrical and Electronics Engineers (IEEE) aerospace conference, Snowmass, CO (United States), 21-28 Mar 1998

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  • Other: DE98002721
  • Report No.: SAND--98-0305C
  • Report No.: CONF-980319--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 634061
  • Archival Resource Key: ark:/67531/metadc696060

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • February 1, 1998

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 8:42 p.m.

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Choquette, K.D.; Hou, H.Q.; Geib, K.M. & Hammons, B.E. Selectively oxidized vertical-cavity laser performance and technology, article, February 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc696060/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.