Growth and luminescence of porous silicon: X-ray and photoluminescence measurements

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The authors have shown in their previous studies that applications of x-ray scattering techniques in a transmission geometry open an avenue for in situ structural investigation of silicon/solution, in general, semiconductor/solution interfaces. In these studies, the surface morphological evolution was deduced from x-ray reflectivity measurements and the pore-pore pair-distribution function was obtained from diffuse scattering measurements. The combination of these two techniques provided a complete phenomenological description of the pore formation and growth based on the most fundamental Langevin equation of interface-evolution phenomena, known as Edward-Wilkinson model. In essence, the high-current-density condition, where the surface etching occurs via surface oxidation ... continued below

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10 p.

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You, H.; Tanzer, J. A.; Nagy, Z.; Gaburro, Z. & Babic, D. September 1997.

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Description

The authors have shown in their previous studies that applications of x-ray scattering techniques in a transmission geometry open an avenue for in situ structural investigation of silicon/solution, in general, semiconductor/solution interfaces. In these studies, the surface morphological evolution was deduced from x-ray reflectivity measurements and the pore-pore pair-distribution function was obtained from diffuse scattering measurements. The combination of these two techniques provided a complete phenomenological description of the pore formation and growth based on the most fundamental Langevin equation of interface-evolution phenomena, known as Edward-Wilkinson model. In essence, the high-current-density condition, where the surface etching occurs via surface oxidation of silicon and dissolution of the surface oxide, inhibits short-wave length fluctuations and the low-current-density condition, where the surface etching occurs via direct dissolution of H{sub 2}SiF{sub 6} formed at the interface, amplifies fluctuations with length scales of space-charge width. These two conditions are found to be consistent with the sign inversion of coefficient for the curvature dependent term of the Langevin equation. In this study extending the previous studies, the authors will show that the luminescence and the two conditions under which the porous silicon (PS) produced are directly related, based on x-ray and photoluminescence (PL) measurements.

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10 p.

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OSTI as DE97053713

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  • 191. meeting of the Electrochemical Society, Inc., Montreal (Canada), 4-9 May 1997

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  • Other: DE97053713
  • Report No.: ANL/MSD/CP--93901
  • Report No.: CONF-970517--
  • Grant Number: W-31-109-ENG-38
  • Office of Scientific & Technical Information Report Number: 563796
  • Archival Resource Key: ark:/67531/metadc696050

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  • September 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • Dec. 16, 2015, 6:36 p.m.

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You, H.; Tanzer, J. A.; Nagy, Z.; Gaburro, Z. & Babic, D. Growth and luminescence of porous silicon: X-ray and photoluminescence measurements, article, September 1997; Illinois. (digital.library.unt.edu/ark:/67531/metadc696050/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.