InAsSb-based mid-infrared lasers (3.5--3.9 {micro}m) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition

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Mid-infrared (3--5 {micro}m) lasers and LED`s are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The metal-organic chemical vapor deposition (MOCVD) growth of AlAs{sub 1{minus}x}Sb{sub x} cladding layers and InAsSb/InAsP superlattice active regions are described. A regrowth technique has been used to fabricate gain-guided, injection lasers using undoped (p-type) AlAs{sub 0.16}Sb{sub 0.84} for optical confinement. In device studies, the authors demonstrate lasers and LEDs utilizing the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for injection of electrons into the active ... continued below

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9 p.

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Allerman, A. A.; Biefeld, R. M. & Kurtz, S. R. October 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Mid-infrared (3--5 {micro}m) lasers and LED`s are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures display unique electronic properties that are beneficial to the performance of these midwave infrared emitters. The metal-organic chemical vapor deposition (MOCVD) growth of AlAs{sub 1{minus}x}Sb{sub x} cladding layers and InAsSb/InAsP superlattice active regions are described. A regrowth technique has been used to fabricate gain-guided, injection lasers using undoped (p-type) AlAs{sub 0.16}Sb{sub 0.84} for optical confinement. In device studies, the authors demonstrate lasers and LEDs utilizing the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for injection of electrons into the active region of emitters. This avoids the difficulties associated with n-type doping of AlAsSb cladding layers required for conventional p-n junction lasers and also provides a means for construction of active regions with multiple gain stages. Gain guided injected lasers employing a strained InAsSb/InAs multi-quantum well active region operated up to 210 K in pulsed mode, with an emission wavelength of 3.8--3.9 {micro}m. A characteristic temperature of 40 K was observed to 140 K and 29 K from 140 K to 210 K. An optically pumped laser with an InAsSb/InAsP superlattice active region is also described. The maximum operating temperature of this 3.7 {micro}m laser was 240 K.

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9 p.

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OSTI as DE97006880

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  • SPIE international symposium, San Jose, CA (United States), 8-14 Feb 1997

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  • Other: DE97006880
  • Report No.: SAND--96-1964C
  • Report No.: CONF-970231--45
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 537357
  • Archival Resource Key: ark:/67531/metadc695702

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  • October 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 8:39 p.m.

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Allerman, A. A.; Biefeld, R. M. & Kurtz, S. R. InAsSb-based mid-infrared lasers (3.5--3.9 {micro}m) and light-emitting diodes with AlAsSb claddings and semi-metal electron injection grown by metal-organic chemical vapor deposition, article, October 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc695702/: accessed December 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.