Design and Characterization of Next-Generation Micromirrors Fabricated in a Four-Level, Planarized Surface-Micromachined Polycrystalline Silicon Process

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This paper describes the design and characterization of several types of micromirror devices to include process capabilities, device modeling, and test data resulting in deflection versus applied potential curves. These micromirror devices are the first to be fabricated in the state-of-the-art four-level planarized polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics which have previously been unrealizable in standard three-layer polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces using ... continued below

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13 p.

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Michalicek, M.A.; Comtois, J.H. & Barron, C.C. December 31, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This paper describes the design and characterization of several types of micromirror devices to include process capabilities, device modeling, and test data resulting in deflection versus applied potential curves. These micromirror devices are the first to be fabricated in the state-of-the-art four-level planarized polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics which have previously been unrealizable in standard three-layer polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces using Chemical Mechanical Polishing (CMP), unique post-process metallization, and the best active surface area to date. This paper presents the design, fabrication, modeling, and characterization of several variations of Flexure-Beam (FBMD) and Axial-Rotation Micromirror Devices (ARMD). The released devices are first metallized using a standard sputtering technique relying on metallization guards and masks that are fabricated next to the devices. Such guards are shown to enable the sharing of bond pads between numerous arrays of micromirrors in order to maximize the number of on-chip test arrays. The devices are modeled and then empirically characterized using a laser interferometer setup located at the Air Force Institute of Technology (AFIT) at Wright-Patterson AFB in Dayton, Ohio. Unique design considerations for these devices and the process are also discussed.

Physical Description

13 p.

Notes

INIS; OSTI as DE98000384

Source

  • IEEE innovative systems in silicon `97, Austin, TX (United States), 8-10 Oct 1997

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  • Other: DE98000384
  • Report No.: SAND--97-2532C
  • Report No.: CONF-971088--
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/622545 | External Link
  • Office of Scientific & Technical Information Report Number: 622545
  • Archival Resource Key: ark:/67531/metadc695412

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  • December 31, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 7:27 p.m.

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Michalicek, M.A.; Comtois, J.H. & Barron, C.C. Design and Characterization of Next-Generation Micromirrors Fabricated in a Four-Level, Planarized Surface-Micromachined Polycrystalline Silicon Process, report, December 31, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc695412/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.