Epitaxial Growth of Yb<sub>2</sub>O<sub>3</sub> Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process Page: 1 of 8
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ORNL/CP-102590
EPITAXIAL GROWTH OF Yb2O3 BUFFER LAYERS ON BIAXIALLY
TEXTURED-Ni (100) SUBSTRATES BY SOL-GEL PROCESS
T. G. CHIRAYIL*, M. PAATHMAN*, D. B. BEACH*, J. S. MORRELL*t, E. Y. SUN',
A. GOYALt, R. K. WILLIAMS', D. F. LEEt, P. M. MARTIN , D. M. KROEGER,
R FEENSTRAt, D. T. VEREBELYI$ and D. K. CHRISTEN*
* Chemical and Analytical Sciences Division, t Metal and Ceramics Division, $ Solid State
Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
'Department of Chemistry, University of Tennessee, Knoxville, TN 37996
ABSTRACT
In order to develop an alternative buffer layer architecture using the sol-gel process to
produce YBCO (YBa2Cu3O7-) coated conductors, Yb203 has been chosen as the candidate
material. Buffer layers of Yb203 were epitaxially grown on biaxially textured-Ni (100)
substrates by the sol gel process-for the first time. The Yb203 precursor solution was prepared
from an alkoxide sol-gel route in 2-methoxyethanol and was deposited on textured-Ni (100)
substrates by either spin coating or dip coating methods. The amorphous film was then
processed at 1160"C under flowing (96%)Ar/H2(4%) gas mixture for one hour. The Yb203 film
exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans
indicated good in plane and out of plane orientations. The X-ray (222) pole figure showed a
cube-on-cube epitaxy. High current YBCO films were grown on the Yb203 sol-gel buffered-Ni
substrates.
INTRODUCTION
The RABiTS (Rolling-Assisted Biaxially Textured Substrates) approach developed at the
Oak Ridge National Laboratory (ORNL) has emerged as one of the leading techniques for the
fabrication of YBa2Cu3O7-4 (YBCO) coated conductors [1,2] in the development of
superconducting wires for high temperature, high-field applications. The process involves
obtaining cube textured Ni (100) substrates by cold-rolling Ni rods followed by recrystallization.
The buffer layers are then epitaxially grown on the textured metal substrates followed by the
deposition of in-plane oriented superconducting films. Critical current densities of YBCO films
over 1 MA/cm2 at 77 K have been demonstrated on rare-earth oxide (RE203) buffer layers with
various architectures via vacuum process [3,4]. The goal of this research is to develop the
RABiTS process using a non-vacuum approach such as the sol-gel or the MOD processes.
The non-vacuum approach has many advantages. The techniques are very cost-effective
and easily scalable. The solution process gives better homogeneity and composition control
because the precursors are mixed at atomic levels. Substrates with various shapes and forms can
be coated with ease by spin coating or dip coating methods.
Previously, buffer layers prepared by the sol-gel technique showed epitaxial growth on
single crystal substrates [5-9], but resulted in multiple orientations on textured-Ni (100)
substrates [10-12]. Beach et al. at ORNL recently demonstrated the epitaxial growth of a rare-
earth oxide, Gd203, buffer layer on textured-Ni (100) substrate by sol-gel process for the first
time [13]. The Gd2O3 precursor solution was prepared via an all alkoxide sol-gel route. The
textured film had a continuous and a dense microstructure without any cracks.
In this paper, we report the preparation of the Yb203 precursor solution, film deposition
and characterization of the sol-gel buffer layer on textured-Ni (100) substrate for the first time.
"The submitted manuscript has been authored
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Beach, D. B.; Chirayil, T. G.; Christen, D. K.; Feenstra, R.; Goyal, A.; Kroeger, D. M. et al. Epitaxial Growth of Yb<sub>2</sub>O<sub>3</sub> Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process, article, April 5, 1999; Oak Ridge, Tennessee. (https://digital.library.unt.edu/ark:/67531/metadc695367/m1/1/: accessed April 23, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.