Electrical and chemical characterization of FIB-deposited insulators

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Description

The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxane-based FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in ... continued below

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8 p.

Creation Information

Campbell, A.N.; Tanner, D.M.; Soden, J.M.; Adams, E.; Gibson, M.; Abramo, M. et al. October 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxane-based FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric SiO{sub 2} insulators.

Physical Description

8 p.

Notes

OSTI as DE97008362

Source

  • International symposium for testing and failure analysis, Santa Clara, CA (United States), 27-31 Oct 1997

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  • Other: DE97008362
  • Report No.: SAND--97-1965C
  • Report No.: CONF-971037--1
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/532558 | External Link
  • Office of Scientific & Technical Information Report Number: 532558
  • Archival Resource Key: ark:/67531/metadc693908

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • October 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 8:55 p.m.

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Campbell, A.N.; Tanner, D.M.; Soden, J.M.; Adams, E.; Gibson, M.; Abramo, M. et al. Electrical and chemical characterization of FIB-deposited insulators, report, October 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc693908/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.