Longevity of optically activated, high gain GaAs photoconductive semiconductor switches

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The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to well over 10 million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The first was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. The authors reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and ... continued below

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9 p.

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Loubriel, G.M.; Zutavern, F.J. & Mar, A. August 1, 1997.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 22 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to well over 10 million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The first was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. The authors reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of {approximately}2 kV. At currents of {approximately}70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort the authors measured a carrier density of 6 x 10{sup 18} electrons (or holes)/cm{sup 3} in filaments that carry a current of 5 A.

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9 p.

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OSTI as DE97007914

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  • 11. IEEE international pulsed power conference, Baltimore, MD (United States), 29 Jun - 2 Jul 1997

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  • Other: DE97007914
  • Report No.: SAND--96-2891C
  • Report No.: CONF-9706113--5
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 508103
  • Archival Resource Key: ark:/67531/metadc693738

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  • August 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 4:16 p.m.

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Loubriel, G.M.; Zutavern, F.J. & Mar, A. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches, article, August 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc693738/: accessed September 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.