Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

PDF Version Also Available for Download.

Description

Epitaxial grown thick layers ({ge} 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 {times} 10{sup 12} cm{sup {minus}3}) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E{sub p} = 24 GeV) with a fluence of 1.5 {times} 10{sup 11} cm{sup {minus}2}, no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects ... continued below

Physical Description

9 p.

Creation Information

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E. & Collaboration, CERN RD-48 ROSE December 1, 1997.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Authors

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

Epitaxial grown thick layers ({ge} 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 {times} 10{sup 12} cm{sup {minus}3}) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E{sub p} = 24 GeV) with a fluence of 1.5 {times} 10{sup 11} cm{sup {minus}2}, no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ``sinking`` process, however, becomes non-effective at high radiation fluences (10{sup 14} cm{sup {minus}2}) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 {times} 10{sup 14} cm{sup {minus}2} the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 {times} 10{sup 12} cm{sup {minus}3} after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon.

Physical Description

9 p.

Notes

INIS; OSTI as DE98004434

Source

  • Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Albuquerque, NM (United States), 11-13 Nov 1997

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Other: DE98004434
  • Report No.: BNL--64973/98/3-Rev.
  • Report No.: CONF-971147--
  • Grant Number: AC02-76CH00016
  • DOI: 10.2172/645583 | External Link
  • Office of Scientific & Technical Information Report Number: 645583
  • Archival Resource Key: ark:/67531/metadc693389

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • December 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

Description Last Updated

  • Nov. 9, 2015, 12:45 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 7

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E. & Collaboration, CERN RD-48 ROSE. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors, report, December 1, 1997; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc693389/: accessed April 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.