Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions Metadata

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Title

  • Main Title Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Creator

  • Author: Agarwal, A.
    Creator Type: Personal
    Creator Info: Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.
  • Author: Eaglesham, D.J.
    Creator Type: Personal
  • Author: Gossmann, H.J.
    Creator Type: Personal
  • Author: Pelaz, L.
    Creator Type: Personal
  • Author: Herner, S.B.
    Creator Type: Personal
  • Author: Jacobson, D.C.
    Creator Type: Personal
    Creator Info: Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.
  • Author: Haynes, T.E.
    Creator Type: Personal
    Creator Info: Oak Ridge National Lab., TN (United States)
  • Author: Erokhin, Y.
    Creator Type: Personal
  • Author: Simonton, R.
    Creator Type: Personal
    Creator Info: Eaton Corp., Beverly, MA (United States). Semiconductor Equipment Operations

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: USDOE, Washington, DC (United States)

Publisher

  • Name: Oak Ridge National Laboratory
    Place of Publication: Tennessee
    Additional Info: Oak Ridge National Lab., TN (United States)

Date

  • Creation: 1997-12-01

Language

  • English

Description

  • Content Description: Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
  • Physical Description: 9 p.

Subject

  • STI Subject Categories: 42 Engineering Not Included In Other Categories
  • Keyword: Diffusion
  • Keyword: Superlattices
  • Keyword: Ion Implantation
  • Keyword: Crystal Doping
  • STI Subject Categories: 36 Materials Science
  • Keyword: Crystal Defects
  • Keyword: Boron
  • Keyword: Semiconductor Junctions
  • Keyword: Physical Radiation Effects
  • Keyword: Semiconductor Materials
  • Keyword: Silicon

Source

  • Conference: 1997 international electron devices meeting, Washington, DC (United States), 7-10 Dec 1997

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE98000575
  • Report No.: ORNL/CP--94748
  • Report No.: CONF-971207--
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 554879
  • Archival Resource Key: ark:/67531/metadc693298

Note

  • Display Note: INIS; OSTI as DE98000575