Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

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Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

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9 p.

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Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. et al. December 1, 1997.

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Description

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

Physical Description

9 p.

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INIS; OSTI as DE98000575

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  • 1997 international electron devices meeting, Washington, DC (United States), 7-10 Dec 1997

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  • Other: DE98000575
  • Report No.: ORNL/CP--94748
  • Report No.: CONF-971207--
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 554879
  • Archival Resource Key: ark:/67531/metadc693298

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  • December 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • Jan. 21, 2016, 4:53 p.m.

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Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. et al. Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions, article, December 1, 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc693298/: accessed September 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.