GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz Metadata

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Title

  • Main Title GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz

Creator

  • Author: Baca, A.G.
    Creator Type: Personal
  • Author: Hietala, V.M.
    Creator Type: Personal
  • Author: Greenway, D.
    Creator Type: Personal
  • Author: Shul, R.J.
    Creator Type: Personal
  • Author: Hafich, M.J.
    Creator Type: Personal
    Creator Info: Sandia National Labs., Albuquerque, NM (United States)
  • Author: Zolper, J.C.
    Creator Type: Personal
    Creator Info: Naval Research Lab., Arlington, VA (United States)
  • Author: Sherwin, M.E.
    Creator Type: Personal
    Creator Info: Microwave Signal, Inc., Clarksburg, MD (United States)

Contributor

  • Sponsor: United States. Department of Energy. Office of Financial Management and Controller.
    Contributor Type: Organization
    Contributor Info: USDOE Office of Financial Management and Controller, Washington, DC (United States)
  • Sponsor: United States. Department of Energy. Assistant Secretary for Human Resources and Administration.
    Contributor Type: Organization
    Contributor Info: USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM (United States)

Date

  • Creation: 1998-05-01

Language

  • English

Description

  • Content Description: In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB of gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.
  • Physical Description: 9 p.

Subject

  • Keyword: Integrated Circuits
  • Keyword: Microwave Amplifiers
  • Keyword: Milliwatt Power Range
  • STI Subject Categories: 42 Engineering Not Included In Other Categories
  • Keyword: Gallium Arsenides

Source

  • Conference: 193. meeting of the Electrochemical Society, Inc., San Diego, CA (United States), 3-8 May 1998

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE98003345
  • Report No.: SAND--98-0624C
  • Report No.: CONF-980504--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 642719
  • Archival Resource Key: ark:/67531/metadc693291

Note

  • Display Note: OSTI as DE98003345