GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz

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In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB of ... continued below

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9 p.

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Baca, A.G.; Hietala, V.M.; Greenway, D.; Shul, R.J.; Hafich, M.J.; Zolper, J.C. et al. May 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB of gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.

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9 p.

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OSTI as DE98003345

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  • 193. meeting of the Electrochemical Society, Inc., San Diego, CA (United States), 3-8 May 1998

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  • Other: DE98003345
  • Report No.: SAND--98-0624C
  • Report No.: CONF-980504--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 642719
  • Archival Resource Key: ark:/67531/metadc693291

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  • May 1, 1998

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 23, 2016, 2:07 p.m.

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Baca, A.G.; Hietala, V.M.; Greenway, D.; Shul, R.J.; Hafich, M.J.; Zolper, J.C. et al. GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz, article, May 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc693291/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.