Polysilicon TFT fabrication on plastic substrates

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Description

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

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7 p.

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Carey, P.G.; Smith, P.M.; Wickboldt, P.W.; Thompson, M.O. & Sigmon, T.W. August 6, 1997.

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Description

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Physical Description

7 p.

Notes

OSTI as DE98052124

Other: FDE: PDF; PL:

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  • 1997 international display research conference, Toronto (Canada), 13-16 Sep 1997

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  • Other: DE98052124
  • Report No.: UCRL-JC--128224
  • Report No.: CONF-9709202--
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 641353
  • Archival Resource Key: ark:/67531/metadc692974

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  • August 6, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 6, 2017, 6:03 p.m.

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Carey, P.G.; Smith, P.M.; Wickboldt, P.W.; Thompson, M.O. & Sigmon, T.W. Polysilicon TFT fabrication on plastic substrates, article, August 6, 1997; California. (digital.library.unt.edu/ark:/67531/metadc692974/: accessed August 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.