Thermal stability of fluorinated SiO{sub 2} films: Effects of hydration and film-substrate interaction

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Fluorinated SiO{sub 2} (SiOF) films have emerged as a leading candidate to replace SiO{sub 2} as an intermetal dielectric (IMD) for future ultra-large scale integrated microelectronics. It is acknowledged, however, that SiOF films can exhibit instability problems, particularly in their tendency for moisture absorption. The thermal stability of fluorinated SiO{sub 2} films (SiOF) was found to be dependent on F content and the type of substrate upon which the film was deposited. SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance (ECR) plasma upon Si, Al/Si, TiN/Al/Si, and Al/SiO{sub 2}/Si substrates. Following deposition, the ... continued below

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6 p.

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Sullivan, J.P.; Barbour, J.C.; Newcomer, P.P.; Apblett, C.A.; Seager, C.H.; Baca, A.G. et al. August 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Fluorinated SiO{sub 2} (SiOF) films have emerged as a leading candidate to replace SiO{sub 2} as an intermetal dielectric (IMD) for future ultra-large scale integrated microelectronics. It is acknowledged, however, that SiOF films can exhibit instability problems, particularly in their tendency for moisture absorption. The thermal stability of fluorinated SiO{sub 2} films (SiOF) was found to be dependent on F content and the type of substrate upon which the film was deposited. SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance (ECR) plasma upon Si, Al/Si, TiN/Al/Si, and Al/SiO{sub 2}/Si substrates. Following deposition, the films were deliberately hydrated and/or annealed and their stability assessed. Hydration was found to only affect the high F content films. Capacitance changes with annealing in the high F content films were found to occur beginning at 200 C. These changes, which were independent of substrate type, likely occurred due to desorption of H{sub 2}O in the films. After annealing of the high F content films up to 400 C, a reduction in F content was found for SiOF films on some substrates. Significant reductions were found for SiOF films on Al/Si substrates, while little or no change was found for films on TiN/Al/Si, Al/SiO{sub 2}/Si, or Si substrates. Local chemical analysis of those films which showed F reduction indicated that the F profile was approximately uniform throughout the layer and did not pile-up at the interface. The substrate-dependent thermal instability exhibited by these films suggests the chemical nature or qualities of the substrate may play a role in the F reduction reaction.

Physical Description

6 p.

Notes

OSTI as DE97007141

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  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE97007141
  • Report No.: SAND--97-1628C
  • Report No.: CONF-961202--120
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/510432 | External Link
  • Office of Scientific & Technical Information Report Number: 510432
  • Archival Resource Key: ark:/67531/metadc692803

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  • August 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 1:34 p.m.

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Sullivan, J.P.; Barbour, J.C.; Newcomer, P.P.; Apblett, C.A.; Seager, C.H.; Baca, A.G. et al. Thermal stability of fluorinated SiO{sub 2} films: Effects of hydration and film-substrate interaction, report, August 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc692803/: accessed October 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.