Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs

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Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active ... continued below

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9 p.

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Childs, T.T.; Sokolov, V. & Sullivan, C.T. November 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 {micro}m wavelength range and monolithic microwave (or mm-wave) integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors (HEMTs) for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 {micro}m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor-metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented.

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9 p.

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OSTI as DE98001262

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  • SPIE voice, video and data communications conference 3234, Dallas, TX (United States), 2-5 Nov 1997

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  • Other: DE98001262
  • Report No.: SAND--97-2836C
  • Report No.: CONF-971176--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 554832
  • Archival Resource Key: ark:/67531/metadc692740

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  • November 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 9:04 p.m.

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Childs, T.T.; Sokolov, V. & Sullivan, C.T. Lattice-engineered MBE growth of high-indium mole fraction InGaAs for low cost MMICs and (1.3--1.55 {micro}m) OEICs, article, November 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc692740/: accessed April 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.