Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas

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Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily ... continued below

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8 p.

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Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J.; Shul, R.J. et al. December 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Cl{sub 2}-based Inductively Coupled Plasmas with low additional dc self- biases(-100V) produce convenient etch rates(500-1500 A /min) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas(Ar, N{sub 2}, H{sub 2}), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl{sub 2} in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

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8 p.

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OSTI as DE98002589

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  • 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997

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  • Other: DE98002589
  • Report No.: SAND--98-0224C
  • Report No.: CONF-971201--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 627251
  • Archival Resource Key: ark:/67531/metadc692621

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  • December 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 6:23 p.m.

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Cho, Hyun; Vartuli, C.B.; Abernathy, C.R.; Donovan, S.M.; Pearton, S.J.; Shul, R.J. et al. Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas, article, December 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc692621/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.