Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

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Description

A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence ... continued below

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32 p.

Creation Information

Salinger, A.G.; Shadid, J.N. & Hutchinson, S.A. January 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

Physical Description

32 p.

Notes

OSTI as DE98003218

Source

  • Other Information: PBD: Jan 1998

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  • Other: DE98003218
  • Report No.: SAND--98-0242
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/574294 | External Link
  • Office of Scientific & Technical Information Report Number: 574294
  • Archival Resource Key: ark:/67531/metadc692160

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Creation Date

  • January 1, 1998

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 2:46 p.m.

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Salinger, A.G.; Shadid, J.N. & Hutchinson, S.A. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations, report, January 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc692160/: accessed October 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.