The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire

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In-situ optical reflectance is used to monitor the morphological evolution of the two-step GaN growth on sapphire. The amount of H{sub 2} carrier gas used in the growth is observed to strongly influence the morphological evolution of the low temperature buffer layer and the subsequent high temperature nucleation behavior, which in turn affects the structural and electrical properties of the GaN epitaxial films. The optical reflectance transients correlate with the sizes and distributions of nuclei as observed by AFM.

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8 p.

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Ng, T.B.; Han, J.; Biefeld, R.M.; Zolper, J.C.; Crawford, M.H. & Follstaell, D.M. January 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

In-situ optical reflectance is used to monitor the morphological evolution of the two-step GaN growth on sapphire. The amount of H{sub 2} carrier gas used in the growth is observed to strongly influence the morphological evolution of the low temperature buffer layer and the subsequent high temperature nucleation behavior, which in turn affects the structural and electrical properties of the GaN epitaxial films. The optical reflectance transients correlate with the sizes and distributions of nuclei as observed by AFM.

Physical Description

8 p.

Notes

OSTI as DE98002573

Source

  • 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997

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  • Other: DE98002573
  • Report No.: SAND--97-1830C
  • Report No.: CONF-971201--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 620959
  • Archival Resource Key: ark:/67531/metadc692001

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  • January 1, 1998

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 3:37 p.m.

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Ng, T.B.; Han, J.; Biefeld, R.M.; Zolper, J.C.; Crawford, M.H. & Follstaell, D.M. The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire, article, January 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc692001/: accessed October 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.