Dislocation imaging of an InAlGaAs opto-electronic modulator using IBICC

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This paper presents ion beam induced charge collection (IBICC) contrast images showing regions of differing charge collection efficiency within optoelectronic modulator devices. The experiments were carried out at the Sandia nuclear microprobe using 18 MeV carbon and 2 MeV helium ions. Lines of varying densities are observed to run along the different (110) directions which correlate with misfit dislocations within the 392nm thick strained-layer superlattice quantum well of the modulator structure. Independent cross-sectional TEM studies and the electrical properties of the devices under investigation suggest the presence of threading dislocations in the active device region at a density of {approximately}10{sup ... continued below

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19 p.

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Schoene, H.; Lee, S. R. & Briggs, R. D. December 31, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This paper presents ion beam induced charge collection (IBICC) contrast images showing regions of differing charge collection efficiency within optoelectronic modulator devices. The experiments were carried out at the Sandia nuclear microprobe using 18 MeV carbon and 2 MeV helium ions. Lines of varying densities are observed to run along the different (110) directions which correlate with misfit dislocations within the 392nm thick strained-layer superlattice quantum well of the modulator structure. Independent cross-sectional TEM studies and the electrical properties of the devices under investigation suggest the presence of threading dislocations in the active device region at a density of {approximately}10{sup 6} cm{sup {minus}2}. However, no clear evidence of threading dislocations was observed in the IBICC images as they are possibly masked by the strong contrast of the misfit dislocations. Charge carrier transport within the modulator is used to explain the observed contrast. The different signal to noise levels and rates of damage of the incident ions are assessed.

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19 p.

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OSTI as DE97007886

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  • 5. international conference on nuclear microprobe techniques and applications (ICNMTA-5), Santa Fe, NM (United States), 11-15 Nov 1996

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  • Other: DE97007886
  • Report No.: SAND--97-1840C
  • Report No.: CONF-961120--5
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 516003
  • Archival Resource Key: ark:/67531/metadc691947

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  • December 31, 1996

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 7:36 p.m.

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Schoene, H.; Lee, S. R. & Briggs, R. D. Dislocation imaging of an InAlGaAs opto-electronic modulator using IBICC, article, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691947/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.