Transport in arrays of submicron Josephson junctions over a ground plane

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One-dimensional (1D) and two-dimensional (2D) arrays of Al islands linked by submicron Al/Al{sub x}O{sub y}/Al tunnel junctions were fabricated on an insulating layer grown on a ground plane. The arrays were cooled to temperatures as low as 20 mK where the Josephson coupling energy E{sub J} of each junction and the charging energy E{sub C} of each island were much greater than the thermal energy k{sub B}T. The capacitance C{sub g} between each island and the ground plane was much greater than the junction capacitance C. Two classes of arrays were studied. In the first class, the normal state tunneling ... continued below

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161 pages

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Ho, Teressa Rae December 1, 1997.

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  • Ho, Teressa Rae Lawrence Berkeley National Lab., CA (US). Materials Sciences Div.

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One-dimensional (1D) and two-dimensional (2D) arrays of Al islands linked by submicron Al/Al{sub x}O{sub y}/Al tunnel junctions were fabricated on an insulating layer grown on a ground plane. The arrays were cooled to temperatures as low as 20 mK where the Josephson coupling energy E{sub J} of each junction and the charging energy E{sub C} of each island were much greater than the thermal energy k{sub B}T. The capacitance C{sub g} between each island and the ground plane was much greater than the junction capacitance C. Two classes of arrays were studied. In the first class, the normal state tunneling resistance of the junctions was much larger than the resistance quantum for single electrons, R{sub N}{much_gt} R{sub Q{sub e}}{identical_to} h/e{sup 2} {approx} 25.8 k{Omega}, and the islands were driven normal by an applied magnetic field such that E{sub J} = 0 and the array was in the Coulomb blockade regime. The arrays were made on degenerately-doped Si, thermally oxidized to a thickness of approximately 100 nm. The current-voltage (I - V) characteristics of a 1D and a 2D array were measured and found to display a threshold voltage V{sub T} below which little current flows. In the second class of arrays, the normal state tunneling resistance of the junctions was close to the resistance quantum for Cooper pairs, R{sub N}{approx}R{sub Q}{equivalent_to}h/4e{sup 4}{approx}6.45k{Omega}, such that E{sub J}/E{sub C}{approx}1. The arrays were made on GaAs/Al{sub 0.3}Ga{sub 0.7}As heterostructures with a two-dimensional electron gas approximately 100 nm below the surface. One array displayed superconducting behavior at low temperature. Two arrays displayed insulating behavior at low temperature, and the size of the Coulomb gap increased with increasing R{sub g}.

Physical Description

161 pages

Notes

OSTI as DE00582220

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  • Other Information: TH: Thesis (Ph.D.); Submitted to the Univ. of California, Berkeley, CA (US); Supercedes report DE98052321

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  • Other: DE98052321
  • Report No.: LBNL--41203
  • Report No.: ON: DE98052321
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 582220
  • Archival Resource Key: ark:/67531/metadc691937

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 5, 2016, 12:10 p.m.

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Ho, Teressa Rae. Transport in arrays of submicron Josephson junctions over a ground plane, thesis or dissertation, December 1, 1997; California. (digital.library.unt.edu/ark:/67531/metadc691937/: accessed November 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.